V30DM120C Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A eSMP® Se.

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Datasheet Specifications

Part number: V30DM120C
Manufacturer: Vishay ↗
File Size: 121.52 KB
Datasheet: V30DM120C-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available: - Automotive orderi

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A (TA = 125 °C) TJ max. Package 2 x 15 A 120 V 150

V30DM120C Distributors

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V30DM120C Trench MOS Barrier Schottky Rectifier Vishay

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