V30DM120 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5.

📥 Download Datasheet

V30DM120 Datasheet Preview — Preview of V30DM120 PDF

Datasheet Specifications

Part number: V30DM120
Manufacturer: Vishay ↗
File Size: 118.92 KB
Datasheet: V30DM120-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology generation 2 Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximu

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 120 V 250 A VF at IF = 30 A (TA = 125 °C) 0.73 V TJ max

V30DM120 Distributors

📁 Related Datasheet

V300A12xxxx V300B12xxxx V300C12xxxx V300LA10 V300LA10CP V300LA10P

📌 All Tags

V30DM120 Trench MOS Barrier Schottky Rectifier Vishay

Vishay V30DM120-like datasheet