V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A T.

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Datasheet Specifications

Part number: V30DL50C-M3
Manufacturer: Vishay ↗
File Size: 122.69 KB
Datasheet: V30DL50C-M3-Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified
* Meets MSL level 1, per J-STD-020, LF

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 50 V 300 A 0.42 V 150 °C TO-263AC (SMPD) Diode variations Dual common cathod

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V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier Vishay

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