V30DL45 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30DL45 Vishay General Semiconductor Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A eSM.

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Datasheet Specifications

Part number: V30DL45
Manufacturer: Vishay ↗
File Size: 117.06 KB
Datasheet: V30DL45-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 45 V 240 A VF at IF = 30 A (TA = 125 °C) 0.51 V TJ max. 150 °C Package SMPD (TO-263AC) Circuit configurat

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V30DL45 Trench MOS Barrier Schottky Rectifier Vishay

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