V30D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K.

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Datasheet Specifications

Part number: V30D202C
Manufacturer: Vishay ↗
File Size: 117.45 KB
Datasheet: V30D202C-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology generation 2 Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximu

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free,

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V30D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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