Datasheet4U.com

V20200C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

V20200C-E3 Datasheet Preview — Preview of V20200C-E3 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	V20200C-E3
Manufacturer	Vishay
File Size	212.50 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20200C-E3-Vishay.pdf

V20200C-E3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, I.

📁 V20200C-E3 Similar Datasheet

V2000 - Ambient Light Sensor and Proximity Sensor (Sensortek)
V200CH8 - Metal-Oxide Varistors (Littelfuse)
V200ME01-LF - VCOs (Z-Communications)
V200ME07-LF - OSCILLATOR (Z-Communications)
V200ML01 - VOLTAGE CONTROLLED OSCILLATOR (ETC)
V200O1-P01 - TFT LCD Module (CHI MEI)
V201B1-L01 - TFt LCD (CHI MEI)
V201B1-L02 - TFT LCD Module (Chi Mei)

Other Datasheets by Vishay

V20200C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20200G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20200G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Published: Jun 9, 2019 |