V15P45S-M3 SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers

Vishay

Description

www.vishay.com V15P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Ultra Low VF = .

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Datasheet Specifications

Part number: V15P45S-M3
Manufacturer: Vishay ↗
File Size: 100.33 KB
Datasheet: V15P45S-M3-Vishay.pdf
Description: SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 -

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V15P45S-M3 SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Vishay

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