V15P45-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V15P45-M3, V15P45HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low .

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Datasheet Specifications

Part number: V15P45-M3
Manufacturer: Vishay ↗
File Size: 92.10 KB
Datasheet: V15P45-M3-Vishay.pdf
Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 45 V IFSM VF at IF = 15 A TJ max. 210 A 0.42 V 150 °C Package TO-277A (SMPC) Diode variations Single die MECHAN

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V15P45-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Vishay

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