V10PN50-M3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF.

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Datasheet Specifications

Part number: V10PN50-M3
Manufacturer: Vishay ↗
File Size: 101.22 KB
Datasheet: V10PN50-M3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 50 V 180 A 0.40 V 150 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL DATA Case:

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V10PN50-M3 Trench MOS Barrier Schottky Rectifier Vishay

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