Datasheet Details
- Part number
- V10PN50-M3
- Manufacturer
- Vishay ↗
- File Size
- 101.22 KB
- Datasheet
- V10PN50-M3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
V10PN50-M3 Description
www.vishay.com V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF.
V10PN50-M3 Features
* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
V10PN50-M3 Applications
* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
10 A 50 V 180 A 0.40 V 150 °C SMPC (TO-277A)
Circuit configuration
Single
MECHANICAL DATA
Case:
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