V10PM12-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Lo.

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Datasheet Specifications

Part number: V10PM12-M3
Manufacturer: Vishay ↗
File Size: 92.96 KB
Datasheet: V10PM12-M3-Vishay.pdf
Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 120 V 160 A 0.63 V 150 °C TO-277A (SMPC) Diode variation Single die MECHANICAL DATA Case: TO-277A (SMPC) Mo

V10PM12-M3 Distributors

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V10PM12-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Vishay

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