V10PM10 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10PM10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = .

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Datasheet Specifications

Part number: V10PM10
Manufacturer: Vishay ↗
File Size: 105.13 KB
Datasheet: V10PM10-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-fr

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V10PM10 Trench MOS Barrier Schottky Rectifier Vishay

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