V10PL45 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Description

V10PL45 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V a.

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Datasheet Specifications

Part number: V10PL45
Manufacturer: Vishay ↗
File Size: 666.76 KB
Datasheet: V10PL45_Vishay.pdf
Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Features

* TMBS® K eSMP® Series
* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 45 V 200 A 0.35 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base

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V10PL45 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Vishay

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