V10P45S-M3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Lo.

📥 Download Datasheet

V10P45S-M3 Datasheet Preview — Preview of V10P45S-M3 PDF

Datasheet Specifications

Part number: V10P45S-M3
Manufacturer: Vishay ↗
File Size: 94.79 KB
Datasheet: V10P45S-M3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated

V10P45S-M3 Distributors

📁 Related Datasheet

V10P40P V10P420AUTO V10P42AUTO V10P440AUTO V10P460AUTO V10P11P

📌 All Tags

V10P45S-M3 Trench MOS Barrier Schottky Rectifier Vishay

Vishay V10P45S-M3-like datasheet