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V10D60C - Dual Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V10D60C Dual Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V10D60C

Datasheet Details

Part number	V10D60C
Manufacturer	Vishay
File Size	119.42 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V10D60C Datasheet
Additional preview pages of the V10D60C datasheet.

Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICA.

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Published: Apr 4, 2016 |