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N-Channel 30 V (D-S) MOSFET
Si2304BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V
ID (A) 3.2 2.6
Qg (Typ.) 2.6
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2304BDS (L4)* * Marking Code
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
3.2 2.6 2.5 2.
Si2304BDS Datasheet
