Si2302CDS
FEATURES
- Trench FET® power MOSFET
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Marking code: N2
1 G Top View
2 S
APPLICATIONS
- Load switching for portable devices
- DC/DC converter
Available
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (n C) ID (A) Configuration
20 0.057 0.075
3.5 2.9 Single
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
SOT-23 Si2302CDS-T1-E3 Si2302CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
5S
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) a Pulsed drain current b Continuous source current (diode conduction) a
Power dissipation a
Operating junction and storage temperature range
TA = 25 °C TA = 70 °C
TA = 25 °C TA = 70 °C
VDS VGS
IDM IS
TJ, Tstg
20 ±8 2.9 2.3 10 0.72 0.86 0.55 -55 to +150
THERMAL RESISTANCE RATINGS
PARAMETE...
