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IRLIZ24G Power MOSFET

IRLIZ24G Description

Power MOSFET IRLIZ24G, SiHLIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRLIZ24G Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* Fast Switching
* Ease of Paralleling
* Lead (Pb)

IRLIZ24G Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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Power MOSFET Vishay
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