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IRLI630G - Power MOSFET

Description

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com IRLI630G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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