Datasheet4U Logo Datasheet4U.com

IRLIZ14G Power MOSFET

IRLIZ14G Description

www.vishay.com IRLIZ14G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS =.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRLIZ14G Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* Fast switching
* Ease of paralleling
* Material

IRLIZ14G Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

📥 Download Datasheet

Preview of IRLIZ14G PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRLIZ24G - HEXFET POWER MOSFET (International Rectifier)
  • IRLIZ24N - Power MOSFET (International Rectifier)
  • IRLIZ24NPBF - Power MOSFET (International Rectifier)
  • IRLIZ34G - POWER MOSFET (International Rectifier)
  • IRLIZ34N - POWER MOSFET (International Rectifier)
  • IRLIZ34NPBF - HEXFET Power MOSFET (International Rectifier)
  • IRLIZ34NPbF - Power MOSFET (Infineon)
  • IRLIZ44G - POWER MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Vishay
Vishay IRLIZ14G-like datasheet