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IRLD120 Power MOSFET

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Description

www.vishay.com IRLD120 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 175 °C operating temperature
* Material categorization: for definitions of

IRLD120 Distributors

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