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IRL530 Power MOSFET

IRL530 Description

IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 1.
G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedi.

IRL530 Features

* 100 0.16
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
* R DS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* F ast Switching
* Ease of Paralleling
* Compliant to RoHS Directive 2002/95/

IRL530 Applications

* are b ased on Vishay’s knowledge of typic al requirements that are ofte n placed on Vish ay products in generic applications. Such statements are not binding statements about t he sui tability of products f or a particular applicati on. It is th e cu stomer’s respon sibility to validate th at a part

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Power MOSFET Vishay
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