IRLD110 Power MOSFET

Vishay

Description

www.vishay.com IRLD110 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRLD110
Manufacturer: Vishay ↗
File Size: 786.38 KB
Datasheet: IRLD110-Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* 175 °C operating temperature
* Material categorization: for definitions of

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IRLD110 Power MOSFET Vishay

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