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IRLD024 Power MOSFET

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Description

www.vishay.com IRLD024 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* For automatic insertion
* End stackable
* Logic-level gate drive
* RDS(on) dpecified at VGS = 4 V and 5 V
* 175 °C operating temperature
* Fast switching
* Material categorization: for definitions of compliance

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