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IRFI9Z34G Power MOSFET

IRFI9Z34G Description

www.vishay.com IRFI9Z34G Vishay Siliconix Power MOSFET TO-220 FULLPAK S G S GD D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max..
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFI9Z34G Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* P-channel
* 175 °C operating temperature
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization

IRFI9Z34G Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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