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IRFI9630G Power MOSFET

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Description

www.vishay.com IRFI9630G Vishay Siliconix Power MOSFET TO-220 FULLPAK S G S GD D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max..
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* P-channel
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

IRFI9630G Distributors

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