TSTS7302 GaAs IR Emitting Diodes

Vishay Telefunken

TSTS7302 Description

VISHAY TSTS730.Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case .
The TSTS730.

TSTS7302 Features

* High radiant intensity
* Suitable for pulse operation
* Angle of half intensity ϕ = ± 12°
* Peak wavelength λp = 950 nm
* High reliability
* Good spectral matching to Si photodetectors

TSTS7302 Applications

* Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Tcase ≤ 25 °C tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C tp ≤ 100 µs Jun

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TSTS7302 Datasheet Preview — Preview of TSTS7302 PDF

Datasheet Details

Part number: TSTS7302
Manufacturer: Vishay ↗ Telefunken
File Size: 196.47 KB
Datasheet: TSTS7302_VishayTelefunken.pdf
Description: GaAs IR Emitting Diodes

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