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TSTS7300 Infrared Emitting Diode

TSTS7300 Description

Datasheet Values Refer to PCN-OPT-1177-2021-REV-0 www.vishay.com TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAlAs, MQW DESCR.
TSTS7300 is an infrared, 950 nm emitting diode in GaAlAs multi quantum well (MQW) technology in a hermetically sealed TO-18 package with lens.

TSTS7300 Features

* Package type: leaded
* Package form: TO-18
* Dimensions (in mm): Ø 4.7
* Peak wavelength:
* p = 950 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity:  = ± 8°
* Low forward volta

TSTS7300 Applications

* Radiation source in near infrared range PRODUCT SUMMARY COMPONENT TSTS7300 Ie (mW/sr) 95 Note
* Test conditions see table “Basic Characteristics”  (°)
* p (nm) tr (ns) ±8 950 15 ORDERING INFORMATION ORDERING CODE TSTS7300 Note
* MOQ: minimum order quantity PA

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