Datasheet Details
- Part number
- SiHFBC40
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 614.74 KB
- Datasheet
- SiHFBC40_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFBC40 Description
IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFBC40 Features
* 600 1.2
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available
Available
RoHS
SiHFBC40 Applications
* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G
S G D S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFBC40PbF SiHFBC40-E3 IRFBC40 SiHFBC40
A
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