Datasheet Details
- Part number
- SiHFBC20
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 1.61 MB
- Datasheet
- SiHFBC20_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFBC20 Description
Power MOSFET IRFBC20, SiHFBC20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFBC20 Features
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC
Available
RoHS
SiHFBC20 Applications
* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBC20PbF SiHFBC20-E3 IRFBC20 SiHFBC20
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
S
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