Datasheet Details
- Part number
- SiHFBC30
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 804.83 KB
- Datasheet
- SiHFBC30_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFBC30 Description
IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFBC30 Features
* 600 2.2
* Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS
SiHFBC30 Applications
* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220
G
S G D S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFBC30PbF SiHFBC30-E3 IRFBC30 SiH
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