SUD50N02-06P Datasheet - Vishay Siliconix

SUD50N02-06P, N-Channel MOSFET

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0060 at VGS = 10 V 0.0095 at VGS = 4.5 V.

SUD50N02-06P_VishaySiliconix.pdf

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Datasheet Details

Part number:

SUD50N02-06P

Manufacturer:

Vishay ↗ Siliconix

File Size:

159.01 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized for High Efficiency
* 100 % Rg Tested

Applications

* Synchronous Buck DC/DC Conversion - Desktop - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA = 25 °C TC = 25 °C ID Pulsed Drain Current ID

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SUD50N02-06P N-Channel MOSFET Vishay Siliconix

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