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GFB70N03 Datasheet - Vishay Intertechnology

GFB70N03 N-Channel Enhancement-Mode MOSFET

GFB70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8mΩ ID 70A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.

GFB70N03 Features

* Advanced Trench Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for Low Voltage DC/DC Converters

* Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-S

GFB70N03 Datasheet (91.78 KB)

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Datasheet Details

Part number:

GFB70N03

Manufacturer:

Vishay ↗ Intertechnology

File Size:

91.78 KB

Description:

N-channel enhancement-mode mosfet.

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GFB70N03 N-Channel Enhancement-Mode MOSFET Vishay Intertechnology

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