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GFB60N03 - N-Channel MOSFET

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Swit.

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Other Datasheets by General Semiconductor (now Vishay)

Part Number Description
GFB75N03 N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription

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GFB60N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® TO-263AB VDS 30V RDS(ON) 11mΩ ID 60A New Product G D 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) PIN GDS Seating Plate -T- 0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.575 (14.60) 0.625 (15.88) 0.120 (3.05) 0.155 (3.94) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.63 (17.02) 0.33 (8.38) Mounting Pad Layout 0.08 (2.032) 0.24 (6.096) 0.12 (3.
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