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VSP011P03MD - Dual P-Channel Advanced Power MOSFET

Features

  • Dual P-Channel,-5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • Fast Switching.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.5 V 15 mΩ I D -18 A Dual PDFN5x6 Part ID VSP011P03MD Package Type PDFN5x6 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS I.

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Datasheet Details

Part number VSP011P03MD
Manufacturer Vanguard Semiconductor
File Size 303.24 KB
Description Dual P-Channel Advanced Power MOSFET
Datasheet download datasheet VSP011P03MD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VSP011P03MD -30V/-18A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.