VSP003N04HS-G Datasheet | Vergiga

Features - Enhancement mode - Very low on-resistance - Vito MOS® Ⅱ Technology - 100% Avalanche Tested,100% Rg Tested 40V/33A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10V I D(Silicon Limited) I D(Package Limited) 40 V 2.6 mΩ 78 A 33 A PDFN5x6 Part ID VSP003N04HS-G Package Type PDFN5x6 Marking 003N04H Packing 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS ID ID ID IDM IDSM PDSM TSTG,TJ Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V (Silicon limited) Continuous drain current @VGS=10V (Silicon limited) Continuous drain current @VGS=10V (Wire bond limited) Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power dissipation ③ Maximum power dissipation ④ Storage and Junction Temperature Range TC = 25°C TC = 25°C TC = 100°C TC = 25°C TC = 25°C TA = 25°C TA =...