VS4606AS N+P-Channel Advanced Power MOSFET

Vanguard Semiconductor

Description

VS4606AS 30V/6A N+P Channel Advanced Power MOSFET .
Description VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance.

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Datasheet Specifications

Part number: VS4606AS
Manufacturer: Vanguard Semiconductor
File Size: 304.68 KB
Datasheet: VS4606AS-VanguardSemiconductor.pdf
Description: N+P-Channel Advanced Power MOSFET

Features

* N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V
* P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V
* Low On-Resistance

Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Mounted on Large Heat Sink TC =25°C

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VS4606AS N +P-Channel Advanced Power MOSFET Vanguard Semiconductor

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