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VS4407AS - P-Channel Advanced Power MOSFET

General Description

VS4407AS designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant VS4407AS -30V/-13A P-Channel Advanced Power MOSFET V DS R DS(on),typ @ VGS= -10V R DS(on),typ @ VGS= -4.5V ID -30 V 11 mΩ 15 mΩ -13 A.

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Datasheet Details

Part number VS4407AS
Manufacturer Vanguard Semiconductor
File Size 283.66 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4407AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant VS4407AS -30V/-13A P-Channel Advanced Power MOSFET V DS R DS(on),typ @ VGS= -10V R DS(on),typ @ VGS= -4.5V ID -30 V 11 mΩ 15 mΩ -13 A Description VS4407AS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.