VS4410BT
Features
- N-Channel，10V Logic Level Control
- Enhancement mode
- Very low on-resistance RDS(on) @ VGS=10V
- 100% Avalanche test
- Pb-free lead plating; Ro HS pliant
100V/127A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V ID
100 V 6.7 mΩ 127 A
TO-220AB
Part ID VS4410BT
Package Type TO-220AB
Marking 4410BT
Tape and reel information 50PCS/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
TC =25°C TC =25°C TC =100°C TC =25°C
TC =25°C
Rating
100 127 127 90 508 442 259 ±25 -55 to...
