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VS3019AD N-Channel Advanced Power MOSFET

VS3019AD Description

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VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance.

VS3019AD Applications

* TO-252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ID

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Datasheet Details

Part number
VS3019AD
Manufacturer
Vanguard Semiconductor
File Size
250.57 KB
Datasheet
VS3019AD-VanguardSemiconductor.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Vanguard Semiconductor
Vanguard Semiconductor VS3019AD-like datasheet