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VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET

VS3009DS Description

.
VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance.

VS3009DS Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC =25°C I

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Datasheet Details

Part number
VS3009DS
Manufacturer
Vanguard Semiconductor
File Size
254.43 KB
Datasheet
VS3009DS-VanguardSemiconductor.pdf
Description
30V/8A Dual N-Channel Advanced Power MOSFET

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30V Dual N-Channel Advanced Power MOSFET Vanguard Semiconductor
Vanguard Semiconductor VS3009DS-like datasheet