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VS2302AT N-Channel Advanced Power MOSFET

VS2302AT Description

.
VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance.

VS2302AT Features

* Ron(typ. )=30 mΩ @VGS=4.5V
* Low On-Resistance
* 150°C Operating Temperature
* Fast Switching

VS2302AT Applications

* Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposur

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Datasheet Details

Part number
VS2302AT
Manufacturer
Vanguard Semiconductor
File Size
283.39 KB
Datasheet
VS2302AT-VanguardSemiconductor.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Vanguard Semiconductor
Vanguard Semiconductor VS2302AT-like datasheet