VG3664321412BT Datasheet (Vanguard International Semiconductor)

VG3664321412BT, CMOS Synchronous Dynamic RAM

Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.

lt is fabricated with an advanced submicron CMOS technology and designed to operate fro

VG3664321412BT Features

* Single 3.3V ( ± 0.3V ) power supply

* High speed clock cycle time : 8/10 for LVTTL

* High speed clock cycle time : 8/10 for SSTL - 3

* Fully synchronous with all signals referenced to a positive clock edge

* Programmable CAS Iatency (2,3)

* Programma