VG36641641BT Datasheet (Vanguard International Semiconductor)

VG36641641BT, CMOS Synchronous Dynamic RAM

Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank.

it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.

It is packaged in JEDEC stand

VG36641641BT Features

* Single 3.3V ( ± 0.3V ) power supply

* High speed clock cycle time : 8/10ns

* Fully synchronous with all signals referenced to a positive clock edge

* Programmable CAS Iatency (2,3)

* Programmable burst length (1,2,4,8,&Full page)

* Programmable wrap