2N5684 - PNP High Power Silicon Transistor

VPT

Download the 2N5684 datasheet PDF. This datasheet also covers the 2N5683 variant, as both devices belong to the same pnp high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/466.
TO-3 (TO-204AA) Package.
Designed for Use in High Power Amplifier and Switching Circuit.

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2N5684 pnp high power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5683-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5684
Manufacturer	VPT
File Size	437.56 KB
Description	PNP High Power Silicon Transistor
Datasheet	2N5684 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N5680	PNP Silicon Amplifier
2N5681	NPN Power Silicon Transistor
2N5682	NPN Power Silicon Transistor
2N5683	PNP High Power Silicon Transistor
2N5685	NPN HIGH POWER SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N5683, 2N5684 PNP High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/466 • TO-3 (TO-204AA) Package • Designed for Use in High Power Amplifier and Switching Circuit Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current IC = 200 mA dc, 2N5683 IC = 200 mA dc, 2N5684 VCB = -60 Vdc, 2N5683 VCB = -80 Vdc, 2N5684 V(BR)CEO V dc -60 -80 — ICBO µA dc — -5.0 Emitter - Base Cutoff Current VEB = -5 Vdc, IC = 0 IEBO µA dc — -5.0 Collector - Emitter Cutoff Current VCE = -60 V dc, VBE = +1.5 V dc, 2N5683 VCE = -80 V dc, VBE = +1.5 V dc, 2N5684 ICEX1 µA dc — -5.