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1N6492U4, 1N6492 Silicon Schottky Barrier Diode

1N6492U4 Description

1N6492, 1N6492U4 Silicon Schottky Barrier Diode .
The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

1N6492U4 Features

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567
* Extremely Low Forward Voltage and Reverse Leakage
* Reverse Breakdown Voltage: 45 V
* Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4

1N6492U4 Applications

* The 1N6492 is designed to be used in a wide variety of applications, such as low voltage, high efficiency high reliability switching power supplies. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Symbol Reverse Leakage Current VRM = 45 V (pk) IRM1 mA
* 2.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 1N6492U4, 1N6492. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
1N6492U4, 1N6492
Manufacturer
VPT
File Size
454.50 KB
Datasheet
1N6492-VPT.pdf
Description
Silicon Schottky Barrier Diode
Note
This datasheet PDF includes multiple part numbers: 1N6492U4, 1N6492.
Please refer to the document for exact specifications by model.

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Silicon Schottky Barrier Diode VPT
VPT 1N6492U4-like datasheet