1N6492 Datasheet - VPT

1N6492, Silicon Schottky Barrier Diode

1N6492, 1N6492U4 Silicon Schottky Barrier Diode .
The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Features

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567
* Extremely Low Forward Voltage and Reverse Leakage
* Reverse Breakdown Voltage: 45 V
* Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4

Applications

* The 1N6492 is designed to be used in a wide variety of applications, such as low voltage, high efficiency high reliability switching power supplies. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Symbol Reverse Leakage Current VRM = 45 V (pk) IRM1 mA
* 2.

1N6492-VPT.pdf