Datasheet4U Logo Datasheet4U.com

VS3640DS N-Channel 30V MOSFET

VS3640DS Description

VS3640DS-VB VS3640DS-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.009 at VGS = 10 V 0.011 .

VS3640DS Features

* Halogen-free
* Trench Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

VS3640DS Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 13 Continuous Drain Current (TJ = 150 °C) TC =

📥 Download Datasheet

Preview of VS3640DS PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VS3640DS
Manufacturer
VBsemi
File Size
185.19 KB
Datasheet
VS3640DS-VBsemi.pdf
Description
N-Channel 30V MOSFET

📁 Related Datasheet

  • VS3640DB - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640DE - Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640DP - Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640AC - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640AD - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640AE - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640AS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VS3640BC - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

📌 All Tags

VBsemi VS3640DS-like datasheet