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VBQF3316 Dual N-Channel MOSFET

VBQF3316 Description

VBQF3316 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.016 at VGS = 10 V 30 0.020 at VGS = 4.5 V ID (A).

VBQF3316 Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 UIS Tested
* Compliant to RoHS Directive 2002/95/EC DFN 3.3x3.3 3.30 mm S1 1 G1 2 3.30 mm S2 3 G2 4 D1 8 D1 7 D2 6 D2 5 Bottom View APPLI

VBQF3316 Applications

* Synchronous Rectification
* Notebook System Power
* POL D1 D2
* Low Current DC/DC G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source V

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Datasheet Details

Part number
VBQF3316
Manufacturer
VBsemi
File Size
247.30 KB
Datasheet
VBQF3316-VBsemi.pdf
Description
Dual N-Channel MOSFET

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