Datasheet4U Logo Datasheet4U.com

VBQF1101N - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • Low Thermal Resistance Package.
  • 100 % Rg Tested.

📥 Download Datasheet

Datasheet preview – VBQF1101N

Datasheet Details

Part number VBQF1101N
Manufacturer VBsemi
File Size 231.49 KB
Description N-Channel MOSFET
Datasheet download datasheet VBQF1101N Datasheet
Additional preview pages of the VBQF1101N datasheet.

📁 Similar Datasheet

Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBQF1101N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.010 at VGS = 10 V DFN 3x3 EP Top View Bottom View Pin 1 ID (A) 50 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters RoHS COMPLIANT Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
Published: |