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VBN165R04 N-Channel MOSFET

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Description

VBN165R04 N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) (Ω) at 25 °C Qg max.(nC) Qgs (nC) Qgd (nC) Confi.

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Datasheet Specifications

Part number
VBN165R04
Manufacturer
VBsemi
File Size
332.99 KB
Datasheet
VBN165R04-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)

Applications

* Telecommunications - Server and telecom power supplies
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Consumer and computing - ATX power supplies
* Industrial - Welding - Battery chargers
* Renewable energy - Solar (PV inverters

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